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首頁 > Vishay Semiconductors代理商 > SI2305CDS-T1-GE3
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SI2305CDS-T1-GE3

型號描述:
P-Channel 8 V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET -8V Vds 8V Vgs SOT-23
型號:
SI2305CDS-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+NT$16.852
10+NT$9.774
100+NT$6.775
500+NT$5.831
1000+NT$5.224
3000+NT$4.415
6000+NT$4.011
9000+NT$3.168
24000+NT$3.135
起訂量:1 倍增量:1
價格: NT$16.852 數量:

合計: NT$17

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
35mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
960mW (Ta), 1.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
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