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首頁 > Vishay Semiconductors代理商 > SI2304DDS-T1-GE3
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SI2304DDS-T1-GE3

型號描述:
N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET 30V Vds 20V Vgs SOT-23
型號:
SI2304DDS-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+NT$18.3645
10+NT$11.2858
100+NT$7.2456
500+NT$5.476
1000+NT$4.8416
3000+NT$4.1404
6000+NT$3.7731
9000+NT$3.2388
24000+NT$3.1053
起訂量:1 倍增量:1
價格: NT$18.3645 數量:

合計: NT$18

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta), 1.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
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