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TRS3E65H,S1Q

型號描述:
Diode 650 V 3A Through Hole TO-220-2L
DIODE SIL CARBIDE 650V 3A TO220L
型號:
TRS3E65H,S1Q
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$74.947
50+NT$36.117
100+NT$32.316
500+NT$25.64
1000+NT$23.493
2000+NT$21.687
5000+NT$19.734
10000+NT$18.527
起訂量:1 倍增量:1
價格: NT$74.947 數量:

合計: NT$75

Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 3 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
45 µA @ 650 V
Capacitance @ Vr, F
199pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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