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首頁 > Toshiba代理商 > TK32E12N1,S1X
TK32E12N1,S1X
影像僅供參考,以產品規格為準

TK32E12N1,S1X

型號描述:
MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC
型號:
TK32E12N1,S1X
品牌:
Toshiba
交期:
5-8工作天
原廠包裝量:
50
1+NT$54.6
10+NT$49.14
100+NT$38.22
500+NT$31.5656
1000+NT$24.9113
2500+NT$23.2733
5000+NT$21.9083
10000+NT$21.1575
起訂量:1倍增量:1
價格:NT$54.6數量:

合計:NT$55

Series
U-MOSVIII-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 60V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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