TK31E60W,S1VX
- 型號描述:
- MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
- 型號:
- TK31E60W,S1VX
- 品牌:
- Toshiba
- 交期:
- 5-8工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$260.3738 |
| 10+ | NT$234.4388 |
| 50+ | NT$213.6225 |
| 100+ | NT$192.8063 |
起訂量：1倍增量：1
價格:NT$260.3738數量:
合計:NT$260
- Series
- DTMOSIV
- Packaging
- Tube
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 88mOhm @ 15.4A, 10V
- Vgs(th) (Max) @ Id
- 3.7V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs
- 86nC @ 10V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 3000pF @ 300V
- FET Feature
- Super Junction
- Power Dissipation (Max)
- 230W (Tc)
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220
- Package / Case
- TO-220-3
- 精選品牌
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