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首頁 > SILICONIX (VISHAY)代理商 > SIHA6N80AE-GE3
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SIHA6N80AE-GE3

型號描述:
N-Channel 800 V 5A (Tc) 30W (Tc) Through Hole TO-220 Full Pack
型號:
SIHA6N80AE-GE3
品牌:
SILICONIX (VISHAY)
交期:
8-12工作天
原廠包裝量:
1000
1000+NT$23.5595
2000+NT$23.1426
3000+NT$22.7256
4000+NT$22.5171
5000+NT$21.8916
起訂量:1000 倍增量:1
價格: NT$23.5595 數量:

合計: NT$23560

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
422 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
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