我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Infineon Technologies代理商 > IPW60R017C7XKSA1
影像僅供參考,以產品規格為準

IPW60R017C7XKSA1

型號描述:
N-Channel 600 V 109A (Tc) 446W (Tc) Through Hole PG-TO247-3-41
HIGH POWER_NEW
型號:
IPW60R017C7XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$614.2532
30+NT$383.2473
120+NT$349.7391
起訂量:1 倍增量:1
價格: NT$614.2532 數量:

合計: NT$614

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
109A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
17mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id
4V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9890 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
446W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
  • 資訊中心