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IPT017N12NM6ATMA1
影像僅供參考,以產品規格為準

IPT017N12NM6ATMA1

型號描述:
MOSFET TRENCH >=100V
型號:
IPT017N12NM6ATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
2000
1+¥53.508
10+¥45.864
25+¥41.58
100+¥38.22
250+¥35.952
500+¥33.684
1000+¥32.004
2000+¥27.132
起訂量:1倍增量:1
價格:¥53.508數量:

合計:¥53.51

Packaging
Tape & Reel (TR)
Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 150A, 10V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id
3.6V @ 275µA
Supplier Device Package
PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
120 V
Gate Charge (Qg) (Max) @ Vgs
141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 60 V
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