IPD80R2K8CEATMA1
- 型號描述:
- N-CH 800V 1,9A 2800mOhm TO252
- 型號:
- IPD80R2K8CEATMA1
- 品牌:
- Infineon
- 交期:
- 10-15工作天
- 原廠包裝量:
- 幣別 (RMB)稅前單價/PCS
- 點擊查看即時庫存
| 2500+ | ¥6.5157 |
| 5000+ | ¥6.1434 |
| 7500+ | ¥5.771 |
| 10000+ | ¥5.2119 |
起訂量：2500倍增量：2500
價格:¥6.5157數量:
合計:¥16289.25
- Series
- CoolMOS™ CE
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 800V
- Current - Continuous Drain (Id) @ 25°C
- 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 2.8Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id
- 3.9V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 290pF @ 100V
- FET Feature
- -
- Power Dissipation (Max)
- 42W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO252-3
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
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