我的購物車0
購物車中還沒有商品,趕快選購吧!
IPD65R380C6BTMA1
影像僅供參考,以產品規格為準

IPD65R380C6BTMA1

型號描述:
N-Channel 650V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
MOSFET LOW POWER_LEGACY
型號:
IPD65R380C6BTMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
起訂量:1倍增量:1
價格:¥0數量:

合計:¥0.00

Packaging
Tape & Reel (TR)
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
710pF @ 100V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
  • 精選品牌
    • Samsung
    • ADI
    • Murata11
    • Amphenol
    • Roving
    • Walsin
    • Panasonic
    • TE
    • United-Chemi-Con
    • Molex
    • Nichicon
    • Microchip
    • Bourns
    • ROHM
    • AVX
    • Catalyst
    • ST
    • NXP
    • Vishay
    • KEMET
    • TDK
    • FTDI
    • HARTING
    • Mean Well
    • BroadcomLimited
    • Eaton
    • Microsemi
    • Atmel
    • JST
    • Agilent
      • 資訊中心