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首頁 > Infineon代理商 > IPD35N12S3L24ATMA1
IPD35N12S3L24ATMA1
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IPD35N12S3L24ATMA1

型號描述:
N 通道 120V 35 A (Tc) 71W (Tc) 表面黏著式 PG-TO252-3
Summary of Features: OptiMOS - power MOSFET for automotive applications; N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C
型號:
IPD35N12S3L24ATMA1
品牌:
Infineon
交期:
10-18工作天
原廠包裝量:
1+NT$29.12
25+NT$27.04
100+NT$26
500+NT$24.96
1000+NT$23.92
起訂量:1倍增量:1
價格:NT$29.12數量:

合計:NT$29

Series
OptiMOS™
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 25V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
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