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IPB70N10S312ATMA1
影像僅供參考,以產品規格為準

IPB70N10S312ATMA1

型號描述:
N-Channel 100 V 70A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 100V 70A TO263-3
型號:
IPB70N10S312ATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$103.675
10+NT$86.1575
100+NT$68.5649
500+NT$58.0165
起訂量:1倍增量:1
價格:NT$103.675數量:

合計:NT$104

Packaging
Digi-Reel®
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
66nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4355pF @ 25V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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