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IPB120N06S4-H1
影像僅供參考,以產品規格為準

IPB120N06S4-H1

型號描述:
MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
型號:
IPB120N06S4-H1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Series
Automotive, AEC-Q101, OptiMOS™
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
270nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
21900pF @ 25V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number
IPB120
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