IPB100N04S3-03
- 型號描述:
- MOSFET 40V 3.2mOHM AECQ TO263
- 型號:
- IPB100N04S3-03
- 品牌:
- Infineon
- 交期:
- 10-15工作天
- 原廠包裝量:
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1000+ | NT$81.055 |
| 2000+ | NT$76.3425 |
| 4000+ | NT$72.1013 |
| 7000+ | NT$65.0325 |
起訂量：1000倍增量：1000
價格:NT$81.055數量:
合計:NT$81055
- Series
- OptiMOS™
- Packaging
- Tape & Reel (TR)
- Part Status
- Not For New Designs
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 2.5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs
- 145nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 9600pF @ 25V
- FET Feature
- -
- Power Dissipation (Max)
- 214W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO263-3-2
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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