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首頁 > Infineon代理商 > IPB033N10N5LFATMA1
IPB033N10N5LFATMA1
影像僅供參考,以產品規格為準

IPB033N10N5LFATMA1

型號描述:
N 通道 100V 120 A (Tc) 179W (Tc) 表面黏著式 PG-TO263-3
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
型號:
IPB033N10N5LFATMA1
品牌:
Infineon
交期:
6-9工作天
原廠包裝量:
13+¥35.7069
25+¥35.5123
100+¥31.6621
250+¥31.1081
起訂量:13倍增量:1
價格:¥35.7069數量:

合計:¥464.19

Series
OptiMOS™-5
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
102nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
460pF @ 50V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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