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IPA60R190P6XKSA1
影像僅供參考,以產品規格為準

IPA60R190P6XKSA1

型號描述:
MOSFET HIGH POWER_LEGACY
型號:
IPA60R190P6XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
500
500+¥14.7
1000+¥12.6
2500+¥11.844
5000+¥11.34
起訂量:500倍增量:500
價格:¥14.7數量:

合計:¥7350.00

Series
CoolMOS™ P6
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1750pF @ 100V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
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