我的購物車0
購物車中還沒有商品,趕快選購吧!
IPA60R190E6XKSA1
影像僅供參考,以產品規格為準

IPA60R190E6XKSA1

型號描述:
; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding
MOSFET HIGH POWER_LEGACY
型號:
IPA60R190E6XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
起訂量:1倍增量:1
價格:¥0數量:

合計:¥0.00

Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 100V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Part Number
IPA60R190
  • 精選品牌
    • Samsung
    • ADI
    • Murata11
    • Amphenol
    • Roving
    • Walsin
    • Panasonic
    • TE
    • United-Chemi-Con
    • Molex
    • Nichicon
    • Microchip
    • Bourns
    • ROHM
    • AVX
    • Catalyst
    • ST
    • NXP
    • Vishay
    • KEMET
    • TDK
    • FTDI
    • HARTING
    • Mean Well
    • BroadcomLimited
    • Eaton
    • Microsemi
    • Atmel
    • JST
    • Agilent
      • 資訊中心