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IMZ120R045M1XKSA1
影像僅供參考,以產品規格為準

IMZ120R045M1XKSA1

型號描述:
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-4-1
SICFET N-CH 1200V 52A TO247-4
型號:
IMZ120R045M1XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+¥153.12
30+¥123.9392
120+¥116.6491
510+¥105.7132
起訂量:1倍增量:1
價格:¥153.12數量:

合計:¥153.12

Series
CoolSiC™
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
52nC @ 15V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 800V
FET Feature
Current Sensing
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Package / Case
TO-247-4
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