IMZ120R030M1HXKSA1
- 型號描述:
- MOSFET SIC DISCRETE
- 型號:
- IMZ120R030M1HXKSA1
- 品牌:
- Infineon Technologies
- 交期:
- 5-8工作天
- 原廠包裝量:
- 240
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$910.7963 |
| 10+ | NT$821.73 |
| 100+ | NT$717.6488 |
| 480+ | NT$651.105 |
起訂量：1倍增量：1
價格:NT$910.7963數量:
合計:NT$911
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1.2kV
- Current - Continuous Drain (Id) @ 25°C
- 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Rds On (Max) @ Id, Vgs
- 40mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id
- 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs
- 63nC @ 18V
- Vgs (Max)
- +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds
- 2.12nF @ 800V
- FET Feature
- -
- Power Dissipation (Max)
- 227W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO247-4-1
- Package / Case
- TO-247-4
- 精選品牌
- 熱銷產品
- MAX3097EESE+
- DL1-J/S
- SLM-01T-P1.3E
- D38999/20WC35SN
- M24C08-DRMN3TP/K
- D38999/24WJ61SA
- 5055501020
- DS1245AB-70+
- STM32U031C8T6
- C0603C393K1RAC7867
- FL2000188Q
- SSM3J351R,LXHF
- CC1206KKX7R6BB225
- CRCW04021M13FKED
- GRM32ER71A476ME15K
- 475K100CS4-FA
- WFCP04029L000FE66
- ZXTR2012K-13
- GRM188C61E226ME01J
- C315C103J5R5TA
- 25PKV560M10X10.5
- 7XL-8.192MBD-T
- 7XL-8.192MBD-T
- FN9226-10-02
- KGM02AR50J223KH
- NTE3100
- C0805C300J5GACAUTO
- AC0805KRX7R8BB223
- C1206C224K4RAC7800
- VJ0603Y102KXBAC
- LD25S24A4GV00LF
- Z25YCT52R
- BYW86-TR
- 170141-2
- TXU0304PWR
- SBH11-PBPC-D10-ST-BK
- SBH11-PBPC-D10-ST-BK
- 9019050000
- XC6902NA51PR-G
- MCP1804T-A002I/MB
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