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首頁 > Infineon Technologies代理商 > AIMW120R060M1HXKSA1
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AIMW120R060M1HXKSA1

型號描述:
碳化矽MOSFET SIC_DISCRETE
型號:
AIMW120R060M1HXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
240
1+NT$985.005
10+NT$823.0635
100+NT$720.2223
起訂量:1 倍增量:1
價格: NT$985.005 數量:

合計: NT$985

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
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