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首頁 > Infineon Technologies代理商 > AIMDQ75R025M2HXTMA1
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AIMDQ75R025M2HXTMA1

型號描述:
碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2
型號:
AIMDQ75R025M2HXTMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
750
1+NT$423.7191
10+NT$316.5372
100+NT$273.798
500+NT$259.1064
750+NT$219.7062
起訂量:1 倍增量:1
價格: NT$423.7191 數量:

合計: NT$424

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
840 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
22mOhm @ 36.7A, 20V
Vgs(th) (Max) @ Id
5.6V @ 8.1mA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1729 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
272W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-22
Package / Case
22-PowerBSOP Module
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