我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Infineon Technologies代理商 > AIMBF170R650M1XTMA1
影像僅供參考,以產品規格為準

AIMBF170R650M1XTMA1

型號描述:
N-Channel 1700 V 11.2A (Tc) 118W (Tc) Surface Mount PG-TO263-7
AUTOMOTIVE COOLSIC MOSFET 1700 V
型號:
AIMBF170R650M1XTMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000+NT$98.2
2000+NT$96.011
3000+NT$94.916
起訂量:1000 倍增量:1
價格: NT$98.2 數量:

合計: NT$98200

FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
11.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V, 20V
Vgs(th) (Max) @ Id
5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
17.5 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
118W (Tc)
Operating Temperature
-55°C ~ 175°C
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • 資訊中心