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首頁 > INFINEON代理商 > IMW65R107M1HXKSA1
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IMW65R107M1HXKSA1

型號描述:
N-Channel 650 V 20A (Tc) 75W (Tc) Through Hole PG-TO247-3-41
型號:
IMW65R107M1HXKSA1
品牌:
INFINEON
交期:
10-15工作天
原廠包裝量:
30
30+NT$137.8197
60+NT$137.8197
90+NT$137.8197
150+NT$137.8197
210+NT$137.8197
起訂量:30 倍增量:1
價格: NT$137.8197 數量:

合計: NT$4135

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
142mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
496 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
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