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首頁 > Vishay / Siliconix代理商 > SIHB25N50E-GE3
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SIHB25N50E-GE3

型號描述:
N-Channel 500 V 26A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
型號:
SIHB25N50E-GE3
品牌:
Vishay / Siliconix
交期:
5-8工作天
原廠包裝量:
1000
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

Packaging
Tube
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Rds On (Max) @ Id, Vgs
145mOhm @ 12A, 10V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Supplier Device Package
TO-263 (D2PAK)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
500 V
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1980 pF @ 100 V
Qualification
-
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