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首頁 > Vishay / Siliconix代理商 > SI4890BDY-T1-GE3
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SI4890BDY-T1-GE3

型號描述:
N-Channel 30 V 16A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
MOSFET RECOMMENDED ALT SI41
型號:
SI4890BDY-T1-GE3
品牌:
Vishay / Siliconix
交期:
5-8工作天
原廠包裝量:
2500
2500+NT$17.346
5000+NT$16.7182
起訂量:2500 倍增量:2500
價格: NT$17.346 數量:

合計: NT$43365

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1535 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
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