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首頁 > Vishay / Siliconix代理商 > SI4800BDY-T1-GE3
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SI4800BDY-T1-GE3

型號描述:
N-Channel 30 V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
型號:
SI4800BDY-T1-GE3
品牌:
Vishay / Siliconix
交期:
5-8工作天
原廠包裝量:
2500
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±25V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
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