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首頁 > Vishay Siliconix代理商 > SI4186DY-T1-GE3
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SI4186DY-T1-GE3

型號描述:
N-Channel 20 V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
MOSFET N-CH 20V 35.8A 8SO
型號:
SI4186DY-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$48.919
10+NT$33.8644
100+NT$25.7169
500+NT$20.3021
1000+NT$18.561
起訂量:1 倍增量:1
價格: NT$48.919 數量:

合計: NT$49

Packaging
Tape & Reel (TR)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
35.8A (Tc)
Rds On (Max) @ Id, Vgs
2.6mOhm @ 15A, 10V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id
2.4V @ 250µA
Supplier Device Package
8-SOIC
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
20 V
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3630 pF @ 10 V
Qualification
-
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