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首頁 > Vishay Siliconix代理商 > SI2329DS-T1-GE3
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SI2329DS-T1-GE3

型號描述:
P-Channel 8 V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 8V 6A SOT23-3
型號:
SI2329DS-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$23.128
10+NT$15.5288
100+NT$12.4197
500+NT$9.8274
1000+NT$8.8765
起訂量:1 倍增量:1
價格: NT$23.128 數量:

合計: NT$23

Packaging
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 5.3A, 4.5V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Vgs(th) (Max) @ Id
800mV @ 250µA
Supplier Device Package
SOT-23-3 (TO-236)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Vgs (Max)
±5V
Drain to Source Voltage (Vdss)
8 V
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1485 pF @ 4 V
Qualification
-
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