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首頁 > Vishay Siliconix代理商 > SI2301BDS-T1-GE3
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SI2301BDS-T1-GE3

型號描述:
P-Channel 20 V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 20V 2.2A SOT23-3
型號:
SI2301BDS-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$25.1104
起訂量:1 倍增量:1
價格: NT$25.1104 數量:

合計: NT$25

Packaging
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Rds On (Max) @ Id, Vgs
100mOhm @ 2.8A, 4.5V
FET Feature
-
Power Dissipation (Max)
700mW (Ta)
Vgs(th) (Max) @ Id
950mV @ 250µA
Supplier Device Package
SOT-23-3 (TO-236)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Vgs (Max)
±8V
Drain to Source Voltage (Vdss)
20 V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
375 pF @ 6 V
Qualification
-
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