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IRFS3206PBF

型號描述:
MOSFET 60V 1 N-CH HEXFET 3mOhms 120nC
型號:
IRFS3206PBF
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6540 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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