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首頁 > Infineon Technologies代理商 > AIMW120R045M1XKSA1
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AIMW120R045M1XKSA1

型號描述:
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
SICFET N-CH 1200V 52A TO247-3
型號:
AIMW120R045M1XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
30
1+NT$740.4264
30+NT$486.2275
120+NT$465.3684
起訂量:1 倍增量:1
價格: NT$740.4264 數量:

合計: NT$740

Packaging
Tube
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Vgs(th) (Max) @ Id
5.7V @ 10mA
Supplier Device Package
PG-TO247-3
Grade
Automotive
Vgs (Max)
+20V, -7V
Drain to Source Voltage (Vdss)
1200 V
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 800 V
Qualification
AEC-Q101
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