我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > INFINEON代理商 > IMZC120R022M2HXKSA1
影像僅供參考,以產品規格為準

IMZC120R022M2HXKSA1

型號描述:
N-Channel 1200 V 80A (Tc) 329W (Tc) Through Hole PG-TO247-4-17
型號:
IMZC120R022M2HXKSA1
品牌:
INFINEON
交期:
7-12工作天
原廠包裝量:
1
1+NT$719.8626
5+NT$648.3168
10+NT$576.7711
50+NT$537.7606
100+NT$498.6971
250+NT$498.2725
起訂量:1 倍增量:1
價格: NT$719.8626 數量:

合計: NT$720

Packaging
Tube
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
22mOhm @ 32A, 18V
FET Feature
-
Power Dissipation (Max)
329W (Tc)
Vgs(th) (Max) @ Id
5.1V @ 10.1mA
Supplier Device Package
PG-TO247-4-17
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Vgs (Max)
+23V, -7V
Drain to Source Voltage (Vdss)
1200 V
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 800 V
Qualification
-
  • 資訊中心