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首頁 > Infineon Technologies代理商 > IMZA120R040M1HXKSA1
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IMZA120R040M1HXKSA1

型號描述:
碳化矽MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package
型號:
IMZA120R040M1HXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
240
1+NT$408.7048
10+NT$382.2728
25+NT$262.3376
100+NT$227.3152
240+NT$226.9848
起訂量:1 倍增量:1
價格: NT$408.7048 數量:

合計: NT$409

Packaging
Tube
Package / Case
TO-247-4
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Rds On (Max) @ Id, Vgs
54.4mOhm @ 19.3A, 18V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Vgs(th) (Max) @ Id
5.2V @ 8.3mA
Supplier Device Package
PG-TO247-4-8
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Vgs (Max)
+20V, -5V
Drain to Source Voltage (Vdss)
1200 V
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1620 pF @ 800 V
Qualification
-
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