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首頁 > Infineon Technologies代理商 > AIMCQ120R030M1TXTMA1
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AIMCQ120R030M1TXTMA1

型號描述:
碳化矽MOSFET SIC_DISCRETE
型號:
AIMCQ120R030M1TXTMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
750
1+NT$555.072
10+NT$429.52
100+NT$412.3392
750+NT$350.224
起訂量:1 倍增量:1
價格: NT$555.072 數量:

合計: NT$555

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
38mOhm @ 27A, 20V
Vgs(th) (Max) @ Id
5.1V @ 8.6mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1738 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-22
Package / Case
22-PowerBSOP Module
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