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首頁 > onsemi代理商 > KSD363RTU
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KSD363RTU

型號描述:
Bipolar (BJT) Transistor NPN 120 V 6 A 10MHz 40 W Through Hole TO-220-3
雙極結晶體管 - BJT NPN Epitaxial Sil
型號:
KSD363RTU
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
50
1+NT$47.115
10+NT$22.141
100+NT$19.661
500+NT$15.339
1000+NT$12.753
起訂量:1 倍增量:1
價格: NT$47.115 數量:

合計: NT$47

Transistor Type
NPN
Current - Collector (Ic) (Max)
6 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Current - Collector Cutoff (Max)
1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A, 5V
Power - Max
40 W
Frequency - Transition
10MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
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