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首頁 > onsemi代理商 > FDN5618P-B8
FDN5618P-B8
影像僅供參考,以產品規格為準

FDN5618P-B8

型號描述:
Transistor MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R
MOSFET FET -60V 1.7 MOHM SSOT3
型號:
FDN5618P-B8
品牌:
onsemi
交期:
5-8工作天
原廠包裝量:
3000
1+NT$21.4988
10+NT$18.5299
100+NT$13.8548
500+NT$10.8859
1000+NT$8.4289
3000+NT$7.644
6000+NT$7.1321
9000+NT$6.9615
起訂量:1倍增量:1
價格:NT$21.4988數量:

合計:NT$21

Packaging
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Current - Continuous Drain (Id) @ 25°C
1.25A (Ta)
Rds On (Max) @ Id, Vgs
170mOhm @ 1.25A, 10V
FET Feature
-
Power Dissipation (Max)
460mW (Ta)
Vgs(th) (Max) @ Id
3V @ 250µA
Supplier Device Package
SuperSOT™-3
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60 V
Gate Charge (Qg) (Max) @ Vgs
13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 30 V
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