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SUD35N10-26P-GE3
影像僅供參考,以產品規格為準

SUD35N10-26P-GE3

型號描述:
MOSFET 100V 35A 83W 26mohm @ 10V
型號:
SUD35N10-26P-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
2000
1+NT$74.0513
10+NT$66.885
100+NT$53.5763
500+NT$44.0213
1000+NT$36.5138
2000+NT$33.9544
4000+NT$32.6918
10000+NT$31.8386
起訂量:1倍增量:1
價格:NT$74.0513數量:

合計:NT$74

Base Part Number
SUD35
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
8.3W (Ta), 83W (Tc)
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 12V
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
47nC @ 10V
Vgs(th) (Max) @ Id
4.4V @ 250µA
Rds On (Max) @ Id, Vgs
26mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Part Status
Active
Packaging
Tape & Reel (TR)
Series
TrenchFET®
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