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首頁 > Vishay Siliconix代理商 > SQS660CENW-T1_GE3
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SQS660CENW-T1_GE3

型號描述:
N-Channel 60 V 18A (Tc) 62.5W (Tc) Surface Mount PowerPAK? 1212-8W
AUTOMOTIVE N-CHANNEL 60 V (D-S)
型號:
SQS660CENW-T1_GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
3000+NT$11.792
6000+NT$10.93
9000+NT$10.491
15000+NT$10.271
起訂量:3000 倍增量:1
價格: NT$11.792 數量:

合計: NT$35376

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8W
Package / Case
PowerPAK® 1212-8W
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