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首頁 > Vishay Semiconductors代理商 > SQJ858AEP-T1_GE3
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SQJ858AEP-T1_GE3

型號描述:
N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK? SO-8
MOSFET 40V 58A 48W AEC-Q101 Qualified
型號:
SQJ858AEP-T1_GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+NT$59.1003
10+NT$37.7307
100+NT$25.2095
500+NT$19.9338
1000+NT$18.2309
3000+NT$16.0272
6000+NT$14.9253
9000+NT$14.7918
起訂量:1 倍增量:1
價格: NT$59.1003 數量:

合計: NT$59

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
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