我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Vishay Siliconix代理商 > SISS67DN-T1-GE3
影像僅供參考,以產品規格為準

SISS67DN-T1-GE3

型號描述:
P-Channel 30 V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET P-CH 30V 60A PPAK1212-8S
型號:
SISS67DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
3000+NT$19.077
9000+NT$17.144
起訂量:3000 倍增量:1
價格: NT$19.077 數量:

合計: NT$57231

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
4380 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
  • 資訊中心