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首頁 > Vishay Siliconix代理商 > SISS5623DN-T1-GE3
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SISS5623DN-T1-GE3

型號描述:
P-Channel 60 V 10.5A (Ta), 36.3A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK? 1212-8S
P-CHANNEL 60 V (D-S) MOSFET POWE
型號:
SISS5623DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
3000+NT$28.846
9000+NT$26.544
起訂量:3000 倍增量:1
價格: NT$28.846 數量:

合計: NT$86538

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Ta), 36.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1575 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 56.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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