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SIHP4N80E-BE3

型號描述:
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB
型號:
SIHP4N80E-BE3
品牌:
Vishay Intertechnologies
交期:
7-10工作天
原廠包裝量:
50
50+NT$57.4
100+NT$56.217
500+NT$55.033
1000+NT$52.666
2000+NT$51.483
3000+NT$49.708
起訂量:50 倍增量:1
價格: NT$57.4 數量:

合計: NT$2870

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
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