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首頁 > Vishay Siliconix代理商 > SIDR170DP-T1-RE3
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SIDR170DP-T1-RE3

型號描述:
N-Channel 100 V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK? SO-8DC
MOSFET N-CH 100V 23.2A/95A PPAK
型號:
SIDR170DP-T1-RE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$113.306
10+NT$73.717
100+NT$51.235
500+NT$43.802
起訂量:1 倍增量:1
價格: NT$113.306 數量:

合計: NT$113

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6195 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
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