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SI4160DY-T1-GE3

型號描述:
N-Channel 30 V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
MOSFET 30V Vds 20V Vgs SO-8
型號:
SI4160DY-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
2500
1+NT$71.913
10+NT$46.052
100+NT$30.82
500+NT$24.443
1000+NT$22.353
2500+NT$21.326
5000+NT$20.511
10000+NT$20.051
起訂量:1 倍增量:1
價格: NT$71.913 數量:

合計: NT$72

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2071 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 5.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
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