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首頁 > Vishay / Siliconix代理商 > SI3552BDV-T1-GE3
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SI3552BDV-T1-GE3

型號描述:
Mosfet Array 30V 3.4A (Ta), 1.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
MOSFET N- AND P-CHANNEL 30-V (D-S) MOSFET
型號:
SI3552BDV-T1-GE3
品牌:
Vishay / Siliconix
交期:
5-8工作天
原廠包裝量:
3000
1+NT$30.111
10+NT$20.901
100+NT$13.214
500+NT$8.183
1000+NT$6.022
3000+NT$5.349
6000+NT$4.641
9000+NT$4.038
24000+NT$3.224
起訂量:1 倍增量:1
價格: NT$30.111 數量:

合計: NT$30

Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta), 1.9A (Ta)
Rds On (Max) @ Id, Vgs
58mOhm @ 3.4A, 10V, 165mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3nC @ 4.5V, 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W (Ta)
Operating Temperature
-55°C ~ 150°C
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
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