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TK31V60X,LQ

型號描述:
N-Channel 600 V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
MOSFET N-CH 600V 30.8A 4DFN
型號:
TK31V60X,LQ
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$247.212
10+NT$167.108
100+NT$125.237
起訂量:1 倍增量:1
價格: NT$247.212 數量:

合計: NT$247

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad
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