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CSD19538Q2R

型號描述:
N-Channel 100 V 4.6A (Ta), 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
MOSFET 100-V N channel Nex FET power MOSFET si
型號:
CSD19538Q2R
品牌:
Texas Instruments
交期:
5-8工作天
原廠包裝量:
10000
1+NT$41.7375
10+NT$26.3113
100+NT$17.3294
500+NT$13.7567
1000+NT$12.2207
2500+NT$11.1523
5000+NT$10.017
10000+NT$9.249
20000+NT$9.0487
起訂量:1 倍增量:1
價格: NT$41.7375 數量:

合計: NT$42

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
454 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 20.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
6-WSON (2x2)
Package / Case
6-WDFN Exposed Pad
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