GCMS040C120S1-E1
- 型號描述:
- MOSFET模組 Gen3 1200V 40mohm SiC MOSFET & SBD Module, SOT-227
- 型號:
- GCMS040C120S1-E1
- 品牌:
- SemiQ
- 交期:
- 5-8工作天
- 原廠包裝量:
- 30
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$1216.807 |
| 10+ | NT$974.081 |
| 120+ | NT$842.486 |
| 510+ | NT$797.681 |
起訂量：1
倍增量：1
價格:
NT$1216.807
數量:
合計: NT$1217
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Rds On (Max) @ Id, Vgs
- 52mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id
- 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs
- 108 nC @ 18 V
- Vgs (Max)
- +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds
- 2745 pF @ 1000 V
- FET Feature
- -
- Power Dissipation (Max)
- 183W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Grade
- -
- Qualification
- -
- Mounting Type
- Chassis Mount
- Supplier Device Package
- SOT-227
- Package / Case
- SOT-227-4, miniBLOC
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- RT6263BHGJ8F
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- RG2012P-101-B-T5
- 猜你喜歡
- GCM188R71E104KA57
- GCM21B5C2E332FX01L
- GCM21BL81H104KA37L
- GCM21BR91H104KA37L
- GCM32DC72A475ME02L
- GCM32ED70E227ME36L
- GCM2195C1H153GA16J
- GCM188D70E226ME36J
- GCM1555C1H220GA16J
- GCM1555C1H220GA16D
- GCM1555C1H1R0JA16J
- GCM1555C1H1R0JA16D
- GCM033R71E222KE02D
- GCM1555C1H681JA16J
- GCM1555C1H681JA16D
- GCM1555C1H680FA16J
- GCM1555C1H680FA16D
- GCM155R71E822KA37J
- GCM155R71E822KA37D
- GCM1555G1H3R9BA16J
- GCM1555G1H3R9BA16D
- GCMS014C120S1-E1
- GCM1555G1HR50BA16D
- GCM1555G1HR50BA16J
- GCM188R71C394KA55D
- GCM2195C1K912JA16D
- GCM2195C1K912GA16D
- GCM2195C1K912JA16J
- GCM2195C1K912GA16J
- GCM188L81H122MA03J
- GCM155R71H153KA55J
- GCM155R71H153KA55D
- GCM21AR72E152KWB1J
- GCM21AR72E152KWB1D
- GCM216R72A103JA37J
- GCM188R72A102JA37D
- GCM188R72A102MA37J
- GCM188R72A102MA37D
- GCM188R72A102JA37J
- GCM188R72A103MA37J
- 資訊中心
- onsemi 推出基於第七代 IGBT 的智慧功率模組，以降低加熱和冷卻能耗
- 2024-03-16
- Samtec 開設新台灣設計中心
- 2023-11-13
- TI 利用 SiC 柵極驅動器幫助最大限度地提高電動汽車的行駛里程
- 2023-08-12
- 新型 TE Connectivity 連接器幫助汽車 OEM 減小組件尺寸和重量
- 2022-10-09
- TDK 為 ADAS/AD 電源管理提供極其緊湊和可靠的 CLT 功率電感器
- 2022-08-13
- 意法半導體觸控控制器支持新一代AMOLED節能顯示器
- 2022-07-03
- ADI 公司的無線電池管理系統獲得頂級汽車網絡安全認證
- 2022-04-09
- 通過 Samtec 和 SnapEDA 提供 20 萬多個互連符號和封裝
- 2021-11-13
- TE Connectivity 的新型可插拔連接器滿足了照明應用的市場需求
- 2021-07-04
- 意法半導體的低電容汽車瞬態電壓抑制器為高速接口提供保護
- 2021-05-30
- ROHM新型600V IGBT IPM提供領先的低噪聲，低損耗
- 2021-05-08
- Littelfuse收購Hartland Controls
- 2021-04-05
- Molex推出了汽車主動降噪中的重大傳感器創新，以改善安全性和駕駛體驗
- 2021-02-24
