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CIGW252012GM2R2MNE
影像僅供參考,以產品規格為準

CIGW252012GM2R2MNE

型號描述:
2.2 μH Shielded Drum Core, Wirewound Inductor 1008 (2520 Metric)
功率電感器 - SMD CIGW,Wire wound,1008,2.2uH,1.2?,7 embossed,-20 20%
型號:
CIGW252012GM2R2MNE
品牌:
Samsung Electro-Mechanics
交期:
5-8工作天
原廠包裝量:
2500
100000+NT$2.5253
起訂量:100000倍增量:2500
價格:NT$2.5253數量:

合計:NT$252530

Packaging
Tape & Reel (TR)
Tolerance
±20%
Features
-
Package / Case
1008 (2520 Metric)
Size / Dimension
0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type
Surface Mount
Shielding
Shielded
Type
Drum Core, Wirewound
Operating Temperature
-40°C ~ 125°C
DC Resistance (DCR)
-
Q @ Freq
-
Frequency - Self Resonant
-
Ratings
-
Current - Saturation (Isat)
-
Material - Core
Metal Composite
Inductance Frequency - Test
1 MHz
Supplier Device Package
1008 (2520 Metric)
Height - Seated (Max)
-
Inductance
2.2 µH
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