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STB38N65M5

型號描述:
N-Channel 650 V 30A (Tc) 190W (Tc) Surface Mount TO-263 (D2PAK)
MOSFET N-CH 650V 30A D2PAK
型號:
STB38N65M5
品牌:
STMicroelectronics
交期:
5-8工作天
原廠包裝量:
1+NT$263.916
10+NT$178.081
50+NT$141.332
100+NT$129.514
500+NT$123.571
起訂量:1 倍增量:1
價格: NT$263.916 數量:

合計: NT$264

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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